产品信息
CategoriesDiscrete Semiconductor Products > Transistors - FETs, MOSFETs - SingleSeriesHEXFET®PackagingTape & Reel (TR)Part StatusActiveFET TypeP-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)20VCurrent - Continuous Drain (Id) @ 25°C6.7A (Ta)Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5VVgs(th) (Max) @ Id700mV @ 250μAGate Charge (Qg) (Max) @ Vgs50nC @ 4.5VInput Capacitance (Ciss) (Max) @ Vds1500pF @ 15VVgs (Max)±12VFET Feature-Power Dissipation (Max)2.5W (Ta)Rds On (Max) @ Id, Vgs40 mOhm @ 3.2A, 4.5VOperating Temperature-55°C ~ 150°C (TJ)Mounting TypeSurface MountSupplier Device Package8-SOPackage / Case8-SOIC (0.154", 3.90mm Width)
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