深圳市汇创佳电子科技有限公司

CategoriesDiscrete Semiconductor Products > Transistors - FETs, MOSFETs - SingleSeriesHEXFET®PackagingTubePart StatusActiveFET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)100VCurrent - Continuous Drain (Id) @ 25°C42A (Tc)Drive Voltage (Max Rds On, Min Rds On)10VVgs(th) (Max) @ Id4V @ 250μAGate Charge (Qg) (Max) @ Vgs110nC @ 10VInput Capacitance (Ciss) (Max) @ Vds1900pF @ 25VVgs (Max)±20VFET Feature-Power Dissipation (Max)160W (Tc)Rds On (Max) @ Id, Vgs36 mOhm @ 23A, 10VOperating Temperature-55°C ~ 175°C (TJ)Mounting TypeThrough HoleSupplier Device PackageTO-247AC