深圳市汇创佳电子科技有限公司

CategoriesDiscrete Semiconductor Products > Transistors - FETs, MOSFETs - SingleSeriesHEXFET®PackagingTape & Reel (TR)Part StatusActiveFET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)30VCurrent - Continuous Drain (Id) @ 25°C13A (Ta)Drive Voltage (Max Rds On, Min Rds On)4.5V, 10VVgs(th) (Max) @ Id3V @ 250μAGate Charge (Qg) (Max) @ Vgs79nC @ 10VInput Capacitance (Ciss) (Max) @ Vds1800pF @ 25VVgs (Max)±20VFET Feature-Power Dissipation (Max)2.5W (Ta)Rds On (Max) @ Id, Vgs11 mOhm @ 7.3A, 10VOperating Temperature-55°C ~ 150°C (TJ)Mounting TypeSurface MountSupplier Device Package8-SOPackage / Case8-SOIC (0.154", 3.90mm Width)